Laucht works on the quantum control of spins across two platforms: donor spin qubits in silicon (with Morello and Dzurak), where he demonstrated electrically-driven single-spin control in a continuous microwave field and pioneered dressed-state protection against decoherence; and, more recently, spin defects in hexagonal boron nitride — a 2D material whose optically addressable spin defects are the most promising candidate for a van der Waals analogue of the NV centre, with the enormous advantage that the sensor can be placed a single atomic layer from the sample. Positioned against the established body of NV-ensemble quantum sensing work — DEER, nanoscale NMR and T1 relaxometry protocols operating at pT/sqrt(Hz) field sensitivity — hBN spin defects are the field's most active attempt to beat the standoff-distance limitation that caps near-surface NV ensemble sensitivity; a candidate with NV ODMR experience would be immediately productive here, running the same pulse sequences on a new defect. Strong fit.